Investigation of Impact of the Gate Circuitry on IGBT Transistor Dynamic Parameters
Vytautas Bleizgys
Andrius Platakis
Andrius Platakis
Abstract
The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.
Article in Lithuanian
Article in:
Lithuanian
Article published:
Keyword(s): IGBT transistor; dynamic parameters; inverter; frequency converter; AC induction motor
DOI: 10.3846/mla.2010.013
Science – Future of Lithuania / Mokslas – Lietuvos Ateitis ISSN 2029-2341, eISSN 2029-2252
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